Abstract
In ZnO-resin type electrophotography, we consider that the dielectric property of ZnO-resin film is one of the most important factors, especially in reference to the corona discharge and surface potential decay.
The impedance changes of ZnO-resin layer by light irradiation were studied. In the present work, the capacitance changes of ZnO-resin layer was described.
The frequency dependency (Fig. 5, Fig. 6) , light intensity dependency of capacitance (Fig. 7), time build-up and time decay of capacitance changes (Fig. 8, Fig. 9) were observed. From these experiments, the authors found photodielectric effect on ZnO-resin layer.
