Abstract
ZnSe is a semiconductor with a direct gap of 2.7 eV at room temperature and has potential applications for light emitting devices, photosensor and thin-film transistors.
We have prepared ZnSe films by Hydrogen Radical Enhanced Chemical Vapor Deposition. Highly (111) axis oriented ZnSe films have been prepared on glass substrates at 200°C. The temperature dependence of electrical conductivity in the dark and the photoconductive response suggests low density of defect states in the film. Epitaxial ZnSe films have been obtained on GaAs substrates at 200°C. n-type doping has been successfully carried out on epitaxial ZnSe films. In this paper, we discuss the transport process of the precursors and the deposition process.
