Abstract
New types of a-SiC photoreceptors with excellent sensitivity have been developed using aSiC: H as a carrier generation layer (CGL) or a carrier transport layer (CTL). The a-SiC: H films were deposited at a high rate of 1-6 µm/h from a mixture of SiH4 and C2H2 by a plasma CVD process. It is shown that the highly photosensitive film exhibiting ημτ-product more than 10-6 cm2/V used as CGL and highly resistive film with a dielectric constant as low as εs=9 used as CTL can be prepared by selecting a deposition condition, especially the ratio of [rf power]/[source gas flow rate].
