DENSHI SHASHIN GAKKAISHI (Electrophotography)
Online ISSN : 1880-5108
Print ISSN : 0387-916X
ISSN-L : 0387-916X
Preparation of Hydrogenated Amorphous Silicon-Germanium Alloys by Microwave-Excited Plasma CVD
Takeshi WATANABEKazufumi AZUMAMasahiro TANAKAMitsuo NAKATANITadashi SONOBEToshikazu SHIMADA
Author information
JOURNAL FREE ACCESS

1989 Volume 28 Issue 1 Pages 44-51

Details
Abstract
Chemical vapor deposition of a-SiGe:H films, which utilizes a microwave-excited plasma produced at pressures lower than 1 mTorr, has been investigated as a function of deposition pressure and source gas composition. Changes in film properties depending upon deposition pressure were discussed with respect to the effect of atomic hydrogen and ionic deposition precursors. The structural change of Si-H bonds depending upon source gas composition was also discussed referring to the ionization potential and the electron-molecule inelastic collision cross-section of source gases.
Content from these authors
© 1989 by The Imaging Society of Japan
Previous article Next article
feedback
Top