Abstract
Chemical vapor deposition of a-SiGe:H films, which utilizes a microwave-excited plasma produced at pressures lower than 1 mTorr, has been investigated as a function of deposition pressure and source gas composition. Changes in film properties depending upon deposition pressure were discussed with respect to the effect of atomic hydrogen and ionic deposition precursors. The structural change of Si-H bonds depending upon source gas composition was also discussed referring to the ionization potential and the electron-molecule inelastic collision cross-section of source gases.