Amorphous Si/SiC Double-Layered Photoreceptor for Electrophotography

Abstract

Amorphous Si/SiC double-layered structure has been proposed as a photoreceptor for electrophotography, where high photoconductive a-SiC:H(B) is used for a charge-generation layer (CGL), and low dielectric and high resistive a-SiC:H(B) is for a charge-transport layer (CTL). Its advantages of high acceptable surface potential and high photosensitivity over a-Si single-layered structure have been shown by examining the effect of thickness ratio of a-Si:H(B) /a-SiC:H(B) layers. Energy-level matching at the interface of a-Si:H(B)/a-SiC:H(B) junction has also been discussed in detail.