Abstract
Decomposition efficiencies (η) of SiH4 and the related source gases X have been measured by mass spectrometry in SiH4-X-Ar glow-discharge plasma, and the relative rate constants for dissociation reaction of the gases X to SiH4 (Kd,x/Kd,SiH4) have been determined, where X are Si2H6, GeH4, C2H2, NH3, CH4, CO2, CF4 and SiF4. Using these kinetic data obtained, incorporation process of carbon-source species into a-SiC:H films and resultant carbon contents [C] in the films have been discussed for SiH4, CH4 and C2H2 as material gases. Furthermore, a-Si:H/a-SiC:H doublelayered photoreceptors have been fabricated under controlling ηSiH4 and ηCH4in SiH4-CH4-Ar glow-discharge plasma and their electrophotographic properties have been presented.
