Abstract
Determination of localized-state distributions in amorphous semicondutors is of fundamental importance from the viewpoint of practical as well as scientific interest. In this paper the construction of a simple computer controlled spectrometer is described for modulated photocurrent spectroscopy of amorphous semiconductors. The modulated photocurrent technique is based on the analysis of the phase shift between a sinusoidally modulated excitation light and its inducing photocurrent, and a broad range of the localized states can be obtained by this method. The applicability of the spectrometer has been experimentally demonstrated in a prototypical amorphous chalcogenide, amorphous As2Se3 thin film.
