On the Temperature Dependence of Dispersion Parameters in the Transient Photoconductivity of Amorphous Semiconductors

Abstract

Temperature dependence of the dispersion parameter determined from transient photocurrent traces has been numerically examined for various localized-state distributions in amorphous semiconductors. It is found that the dispersion parameter is proportional to temperature even for non-exponential distributions. This result indicates that the existence of the exponential distribution of localized state cannot be concluded only from the proportionality relationship between the dispersion parameter and temprature.