DENSHI SHASHIN GAKKAISHI (Electrophotography)
Online ISSN : 1880-5108
Print ISSN : 0387-916X
ISSN-L : 0387-916X
Original Articles
Influence of Cooling Rate After Baking on Crack of CTL in Preparing of Organic Photoconductor
Tetsuya SATORyuuichi SHINGAE
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1997 Volume 36 Issue 2 Pages 70-74

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Abstract

The effects of composition of carrier transport layer (CTL) and preparing conditions on crack, using tetra-phenyl-butadiene derivatives (1, 1-Bis (p-diethyl aminophenyl)-4, 4-diphenyl-1, 3-butadiene.) as carrier transport materials (CTM), have been studied.
CTM concentration in CTL and baking conditions depend scarcely on crack. Cooling rate after baking OPC depend strongly on crack. No cracks were observed in the case of fast cooling rate (∼ 30.0 °C/s).
There is no difference in mechanical properties and electrostatic properties of OPC between the OPC which cooled fast and the OPC which cooled normally. It was suggested that the crack phenomenon was caused by some aggregation of CTM in the CTL or at the CTL surface.

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© 1997 by The Imaging Society of Japan
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