Abstract
This paper describes a low-noise signal readout technique for CMOS image sensors. The low-noise readout circuits have two-stage architecture with the first gain-stage and the second noise canceling S/H stage. An experimental CMOS sensor with high-gain double-stage noise-canceling circuits is implemented using 0.25μm CMOS technology. Very low-noise level of 34.2 μVrms is achieved.