PROCEEDINGS OF THE ITE ANNUAL CONVENTION
Online ISSN : 2424-2292
Print ISSN : 1343-1846
ISSN-L : 1343-1846
2008
Session ID : 12-1
Conference information

Name : 2008 ITE Annual Convention

Location : [in Japanese]

Date : August 27, 2008 - August 29, 2008

12-1 Si Wafer Defects and Wafer Transient Deformation during Heat Treatment Process
Manabu Itsumi
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CONFERENCE PROCEEDINGS FREE ACCESS

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Abstract
Si wafer defects, produced during insertion/withdrawal into/from furnaces, tend to increase abruptly with increasing diameter of Si wafers. An in-situ observation system is used to quantitatively determine transient deformation of wafers.
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© 2008 The Institute of Image Information and Television Engineers
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