PROCEEDINGS OF THE ITE ANNUAL CONVENTION
Online ISSN : 2424-2292
Print ISSN : 1343-1846
ISSN-L : 1343-1846
2008
Session ID : 14-6
Conference information

Name : 2008 ITE Annual Convention

Location : [in Japanese]

Date : August 27, 2008 - August 29, 2008

14-6 Double-gated FEA for high definition FEDs
Masafumi TAKEDA, Masayoshi NAGAO, Tomoya YOSHIDA, Seigo KANEMARU, Toshikatsu SAKAI, Kei HAGIWARA, Nobuo SAITO, Yoichiro NEO, Toru AOKI, Hidenori MIMURA
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Abstract
The emission current significantly decreases under the focused condition for a conventional double-gated field emitter. We have fabricated the novel double-gated field emitter using RIE and etch-back method. The fabricated double-gated field emitter can focus the electron beam without significant degradation of the emission current.
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© 2008 The Institute of Image Information and Television Engineers
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