PROCEEDINGS OF THE ITE ANNUAL CONVENTION
Online ISSN : 2424-2292
Print ISSN : 1343-1846
ISSN-L : 1343-1846
2017
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Host: The Institute of Image Information and Television Engineers

Name : THE 2017 ITE ANNUAL CONVENTION

Location : [in Japanese]

Date : August 30, 2017 - September 01, 2017

Fabrication of Low Toxic Quantum Dot Light - Emitting Diode using ZnS - AgInS 2
*Genichi MOTOMURA, Toshimitsu TUZUKI, Tatsuya KAMEYAMA, Tsukasa TORIMOTO, Taro UEMATSU, Susumu KUWABATA, Toshihiro YAMAMOTO
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Abstract
Low toxic q uantum dot light - emitting diodes (QD - LEDs) were fabricated using ZnS - AgInS 2 solid solution (ZAIS) and their electrolumine scent properties were investigated. The emission color of ZAIS c ould be controlled by changing fraction of ZnS content in ZAIS. Th e QD - LED using the ZAIS , which gave 86% of the photoluminescence quantum yield , exhibited red light emission from ZAIS i n the DC voltage and its external quantum efficiency was 1.9% .
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© 2017 The Institute of Image Information and Television Engineers
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