Abstract
A CCD image sensor having 512 elements vertically and 340 elements horizontally has been developed. In this device, the frame transfer mode of operation is employed.
The image area of the device, measuring 6.66 mm × 8.84 mm, corresponds to that of a 2/3 inch vidicon, and the electrodes are constructed of overlapping two-level polycrystalline silicon.
It is found by the measurement that the dark current of this sensor is less than 1μA typically, and that the sensitivity is about 0.34μA with its uniformity within 3 percent.
The theoretically expected resolutions of 340 TV lines vertically and 240 TV lines horizontally are confirmed by the image pickup test.
The method, originally proposed by the authors, to control the photoelectric conversion characteristics, that is, to change the knee point and the knee gradation, by applying a control waveform to the integration electrodes, is also experimented confirming the effectiveness of the method.
