1999 Volume 53 Issue 6 Pages 895-900
We have developed a monolithic 512×512-element GeSi/Si heterojunction infrared image sensor. Its operating mechanism is the same as that of the PtSi/Si Schottky-barrier detector. We fabricated the GeSi/Si heterojunction by molecular beam epitaxy and confirmed that ideal strained GeSi films were grown on Si substrates. We evaluated the dependencies of the spectral responsivity on the Ge composition, impurity concentration, and GeSi thickness, and optimized them for 8-12 um infrared detection. The sensor has a pixel size of 34 × 34 um2 and a fill factor of 59%. A low noise equivalent temperature difference of 0.08 K (f/2.0) was obtained at a background of 300 K with a very small responsivity dispersion of 2.2%.
The Proceedings of the Circle of Television Engineers
The Proceedings of the Institute of Television Engineers
The Proceedings of the Institute of Television Engineers
The Institute of Image Information and Televistion Engineers
The Journal of the Institute of Television Engineers of Japan
The Journal of the Institute of Television Engineers of Japan
