A high Sensitivity 1/4-type (Diagonal 4.5 mm) 360 k-pixel FT-CCD Image Sensor with a Single-layer Poly-silicon Electrode

Abstract

We experimentally fabricated a frame transfer CCD (FT-CCD) image sensor for Recommendation ITU-R BT, 601 with a single-layer poly-silicon electrode structure.We set the gap to 0.45 pm to balance charge-handling capability against optical sensitivity. We optimized the membrane structure to improve optical sensitivity. We sandwiched the poly-silicon gate between two silicon-nitride layers with a high refractive index to suppress reflection on the poly-silicon surface. The sensitivity was improved 40% with this structure. An FT-CCD image sensor constructed using this new structure is very simple and has high performance.