Abstract
Nanometer-scale metal/Langmuir-Blodgett (LB) film/metal structure is realized with a scanning probe microscope (SPM). In this configuration, increase in conductance can be induced in the LB film by application of a voltage pulse. Atomic force microscopy combined with scanning tunneling microscopy (AFM/STM) shows that the conductance of the LB film changes without pit formation in the LB film or metal cluster deposition from the tip of the probe. The transition speed is faster than 1μs, and the transition can be induced at several thousand points, at least, without tip degradation. These facts demonstrate the feasibility of information storage devices with high density.
