Abstract
In the present paper, we fabricated the Field Emitter Arrays made of n-type silicon wafers, and those covered with W and Cr. We measured the aging characteristics of field enhancement factor, β, and I-V characteristics. The aging characteristics of field enhancement factor, β, of Si-FEA is decrease with time, and that of W-FEA is stable. The threshould voltage of FEAs covered with metals are lower than that of Si-FEA.
