Abstract
A highly sensitive magnetic sensor and a nondestructive random access memory were developed by using giant magnetoresistive (GMR) effect. The GMR devices were constructed of a multilayered structure including spin-valve film and bias current line, and the device operation was controlled by magnetic field generated by the bias current. A new sensitive GMR sensor was developed by utilizing only the MR loop edge, in which the patterned spin-valve element exhibited the step shape MR loop. In the nondestructive memory, the information was stored as the spin-valve resistance. A low electric power consumption device was realized by the differential type memory.
