Abstract
The dependence of the structural, photoluminescent and cathodoluminescent properties of ZnO thin films deposited by electron beam evaporation on the preparation conditions has been investigated. The films deposited at 200℃ to 400℃ showed c-axis orientation. The films showed two kind of emission with peaks at around 5l0nm or 540nm depending on the temperature and atomosphere at annealing. The film annealed at 800℃ in air showed CL luminance of about 60cd/m^2 under excitation with 2kV, 400μA/cm^2. Moreover, it showed CL without charging-up under excitation even at 250V.
