Abstract
Since large magnetoresistance(MR)effects were reported in FM/I/FM structured magnetic tunnel junction(MTJ)thin films, a lot of works have been performed on the MR characteristics of those films for advanced magnetic devices. Although MTJ thin films showed excellent MR properties such as tens of MR ratio, more reliable and stable formation of insulating layer has been remained as a obstruction for recently developed magnetic devices. Therefore, in this work, MR properties were characterized using FM/I/FM structured thin films as a function of formation conditions of Al Oxide insulating layer, which was reported as a good insulating layer in MTJ thin films.
