Temperature Dependence of Electroluminescence in Cz doped PVCz Double-Layerd EL Devices

Abstract

Temperature dependence of electroluminescent properties of Cz doped PVCz double-layered EL devices has been studied. Luminance is more than 3000cd/m^2 at 110K and 500cd/m^2 at 300K. Temperature dependence of carrier mobility and barrier height at negative electrode has been studied by considering current-voltage characteristics. The temperature dependence of the hole mobility in Cz doped PVCz has been analyzed and the activation energy for carrier hopping has been derived. The tunneling carrier injection at negative electrode has been clearly observed and the barrier height has been determined.