Abstract
CdTe is an attractive semiconductor material for applications in solid-state high-energy x-ray and γ-ray imaging systems. We have studied a laser doping technique for the fabrication to p-type layers. This technique is also suitable for the spatially patterned doping and can be applied in the fabrication of an integrated CdTe device for two-dimensional imaging systems. An iodine-doped n-CdTe epitaxial layer was grown on single-crystal CdTe(111) using MOCVD method. On the other side, p-type doping was demonstrated in the form of minute patterns using our laser-processing technique. This device showed clear patterns reproduced with spatial resolution greater than 101p/mm when mounted on a vidicon type X-ray camera tube.
