Abstract
In this study, Bi added Ba-ferrite (Bi-BaM) thin films were prepared with Ba-ferrite sintered targets with different Bi composition. Amorphous Ba-Fe-O film with the thickness of 20 nm was used as the underlayer for Bi-BaM layer prepared under in-situ heating. Bi-BaM films exhibited a good c-axis orientation at low substrate temperature and this films showed the grain size of 110 nm and c-axis dispersion angle of 3.3°. These values are smaller than those for simple BaM films. Post deposition annealing was also examined in this study. Bi-BaM films were deposited at room temperature, and annealed in vacuum. Grain size of the film prepared with target of n=5.5+Bi(6 at.%) was about 40 nm after annealing at below 750 ℃. Recording densities of 130 to 180 kfrpi has been obtained with Bi-BaM thin film disk.
