Abstract
In the previous works, the cell loss process in ATM switches was approximately modeled by a Gilbert Model with 2 states taking account only of cell loss runs. This paper presents more accurate cell loss process models based on the simulated cell discard process due to buffer overflow in an input-buffered ATM switch. The proposed cell discard process models are an IPP Model and a Fritchman Model with 3 states. These models are introduced taking account of the aggregated performance of cell loss runs and cell loss free runs. The simulation results shows that the proposed models are useful.
