A 320x240 element uncooled infrared FPA(Focal Plane Array)with series PN junction diodes fabricated on a SOI(Silicon On Insulator)wafer has been developed. The forward-biased diodes are used as a temperature detector by measuring the voltage drop across them. The diode has low 1/f noise because it is fabricated on the monocrystalline SOI layer which has few defects. The pixel contains an infrared absorbing structure with a high fill factor of 90% to achieve high absorption. The FPA has shown the NETD(Noise Equivalent Temperature Difference)of 0.17K with f/1.0 optics. The whole structure can be fabricated in a conventional silicon LSI process line. This feature considerably reduces the cost of uncooled FPAs.
