Abstract
The present study describes a wall pinning coercivity enhancement due to roughening a substrate surface by plasma etching using CF_4 gas. Although a roughness amplitude R_a is only 0.62 nm, the coercivity enhancement more than 2 kOe is achieved by adjusting a plasma etching condition, because roughness wavelength is comparable to domain wall width. These results are expected for a prevention technique of domain shrinkage due to thermal energy in high-density magneto-optical recording.
