Abstract
The penetration depth of low energy electron into ZnS was investigated using the structure combined with CaS:Ce emitting layer and ZnS buffer layer. The luminance properties were different from with and without ZnS buffer layer. The luminance depended on the thickness of ZnS and incident electron energy to the film surface. The results obtained in this experiment were larger than the Feldman's equation. It was caused by difference between anode voltage and incident electron energy.
