Abstract
ZnO epitaxial thin film could be growth on Si(111)substrate by oxidation of ZnS epitaxial thin film grown on the substrate by electron beam evaporation technique. Near ultraviolet emissions due to exciton emissions of ZnO were also obtained. Growth conditions to obtain the strong ultraviolet emission from the film were investigated. The best emission properties were obtain when the ZnS epitaxial film was grown on Si substrate at a substrate temperature of 270℃ and the film was annealed at 720℃ in O2 flow for at least 2 hours.
