In order to attain high-rate deposition of MnZn ferrite thin films for back-layers in perpendicular magnetic recording media, a reactive sputtering using powder-metal targets under the mixture gas of Ar and O_2 was performed. Study of discharge voltage-current characteristics and annealing effects clarified that the oxidization condition at the film surface is strongly related to the oxidation at the targets' surface. The oxidation condition of the targets can be estimated by monitoring the discharge voltage. It was succeeded that MnZn ferrite films with(111)crystal orientation were deposited on Pt(111)underlayer. The film revealed 3.4kG of 4πM_s, 70Oe of coercivity. The deposition rate of the new method is 16 times as high as that of the conventional method.