Abstract
The BaM thin films and underlayers(Fe, Cr, Al_2O_3, Fe_2O_3, ZnFe_2O_4) were prepared on (100) oriented bare Si substrate by using a RF/DC magnetron sputtering system, and were compared with crystal orientation, magnetic properties and surface morphology. BaM/Cr/Si film revealed the highest coercivity of BaM films with all the underlayers. All the BaM films except BaM/Fe/Si film showed nearly same values of perpendicular and in-plane coercivities. Perpendicular anisotropy was observed in BaM/Fe/Si film. By adopting ZnFe_2O_4 as underlayer, the interdiffusion of Si from substrate was prohibited to some degree. Elongaed grains from the extinction of small parallet grains were grown with the increase of thickness at no underlayer film.
