CMOS Imaging Device Overlaid with HARP Layer Employing Au Electrodes For Each Pixel

Abstract

In the fabrication of a solid-state HARP imaging device, one of the most essential processes is connecting the HARP film and CMOS readout circuit. Although an indium bump method has been used for its easiness, the fixed pattern noise (FPN) caused by unevenness of the indium bumps prevented this device from being practical. To solve this problem, we propose placing Au electrodes on the HARP film for each pixel. This new structure successfully overcame the problem of the FPN.