Abstract
We studied the features of the newly developed Top and Bottom Contact Field Effect Transistor (TBCFET) with organic semiconductor layers. Pentacene TBCFETs with ca. 0.5μm channel length (L) were fabricated and their transistor properties were measured. The output drain-source currents (I_<DS>) of TBCFET were 1 to 2 orders of magnitude higher than those of ordinary planar type FETs with 100μm channel length. On the other hand, because of the TBC structure, off current tends to become larger in the TBCFET. Therefore, in order to solve this off-current problem, we intentionally formed the Schottky junction at the top electrode/semiconductor interface. As a result, the off current became about 2 orders of magnitude smaller than before the formation of the Schottky junction.
