Excellent scalability of Magnetic Random Access Memory using spin transfer switching and perpendicular magnetic anisotropy

Abstract

Low switching current and Large thermal stability factor is important for achieving a high-density MRAM using spin transfer switching. In this paper, the spin transfer switching current and the thermal stability factor as functions of a diameter of magnetic tunnel junction (MTJ) with the perpendicular magnetic anisotropy is investigated by micromagnetic simulations based on an LLG equation. With the diameter of MTJ decreasing, the spin transfer switching efficiency I_c/ΔEα also decreasing. These calculated results clearly show that the MRAM using the spin transfer switching and the perpendicular magnetic anisotropy have excellent scalability for the high density RAM.