Abstract
An on-chip integrated magnetic field probe has been designed and fabricated using CMOS technology. This probe will be used for measuring the near field of LSI chip in order to evaluate noise component of RF currents inside the LSI chip. A sensor head of this probe was a 2-turn coil of size 20×100μm^2. An amplifier circuit was integrated in proximity to the coil to improve the sensitivity and S/N ratio. The input-output characteristic and the gain-frequency characteristic of the designed amplifier were measured. The difference between design and measurement value of the operating point, was observed which is due to voltage drop across the resistance of power line. Its gain was about 5dB and the cutoff frequency was about 5GHz. It was confirmed that the gain will be improved if the amplifier was designed considering with the impedance matching.
