Abstract
For flexible display development, amorphous In-Ga-Zn oxide thin film transistors were fabricated on plastic substrate at ambient temperature. The transistor structure was coplanar top-gate. a-IGZO TFTs were fabricated on plastic substrate under ambient temperature. After annealing at 150℃ the field-effect mobility was 7.4 cm_2/Vs, threshold voltage 0.3V, subthreshold swing 0.29V/decade and on-off current ratio 10^8. Even after environmental testing at 60℃ and 90% RH for 250h, there were only slight change in the TFT characteristics. The hysteresis with forward and reverse gate voltage also had a small ΔV_<th>, 0.5V.
