This article discusses pixel structure and time resolution of a time-resolved image sensor for fluorescence lifetime imaging. In time-resolved pixel structure using two-stage charge transfer, the time resolution of 160ps has been achieved in the lifetime measurements. This structure has a problem in creating potential barrier-less charge transfer structure which is necessary for high time resolution and weak signal detection. Trapping of signal electrons at the Si-SiO_2 interface in this structure causes a charge transfer delay. To solve these problems, a new time-resolved pixel structure using draining only modulation (DOM) is presented. A condition for getting high time resolution of less than 10ps is also discussed.