ITE Technical Report
Online ISSN : 2424-1970
Print ISSN : 1342-6893
ISSN-L : 1342-6893
35.4
Session ID : EDD-11-19
Conference information
Numerical analysis of recharge effect in LCD with TAOS-TFT
Hideo Kawano
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CONFERENCE PROCEEDINGS FREE ACCESS

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Abstract
The higher mobility causes to promote flicker by increasing recharge effect in TFT LCD. At that case, field through voltage must be set less than two-thirds of the case with conventional a-Si TFT. Then, reducing parasitism capacitance between gate and source in TFT is useful method without reducing Vgh. To achieve it, self-alignment TFT should be introduced to the LCD with high mobility TFT like as TAOS TFT.
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© 2011 The Institute of Image Information and Television Engineers
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