Abstract
Insulating SiO_x film was deposited at low temperature with newly developed plasma source for low heat resistive substrate as for flexible display. The plasma was induced with electromagnetic field generated by two facing electrodes including magnets inside and covered with SiO_2 targets. The higher deposition rate was realized with the mixture of tetramethylsilane and oxygen as source gases. The insulating properties were obtained as 3×10^<-8>A/cm^2 at an electric field of 1MV/cm, and a breakdown voltage of 5MV/cm at 1×10^<-6>A/cm^2 for the film deposition rate at 11nm/min. High density plasma enhanced by magnetic field would be the hopeful solution for deposition of high deposition rate gate insulator at low temperature.
