Organic CMOS Image Sensor with Thin Panchromatic Organic Photoelectric Conversion Layer : Durability and Performance

Abstract

We have developed a new organic CMOS image sensor with a thin overlaid panchromatic organic photoelectric conversion layer as a candidate for sensors in the next generation. The high durability of the organic photoelectric conversion layer, which satisfies a variety of requirements by customers, was attained by the application of a new inorganic protecting layer to it. The wide dynamic range, which is four times higher than that of conventional CMOS image sensor, was attained by the incorporation of a new storage node with large capacity in a signal read-out circuit.