Emission wavelength control of InAs QDs LED
Details
Emission wavelength control of InAs QDs using MOVPE have been studied. Emission wavelength in each arrayed waveguides was controlled by selective area growth of MOVPE using SiO2 mask. Heights of QDs were controlled by using double-capping method, and emission wavelength was controlled by changing the composition of GaInAs buffer layer beneath the QDs. By using these methods, broadband InAs QDs LED, more than 600nm bandwidth, and flat-top spectrum have been obtained.
