Device Simulations for Ultrahigh-Speed and High-Voltage Image Sensors

Abstract

Physical models and algorithms for use in device simulations of ultrahigh-speed and high-voltage image sensors are reported. In the analyses of ultrahigh-speed image sensors, propagation of the electromagnetic field induced by electrodes cannot be ignored. To obtain consistent basic equations for both the device and electromagnetic field propagation simulations, we introduce a charge creation-annihilation field, which is almost equivalent to the Nakanishi-Lautrup field of quantum electrodynamics. To perform current analyses for high-voltage image sensors with applied voltages of >35 V, we adopt quad precision numbers for all parameters. The models, algorithms, and some computational results are reported.