A Lateral Electric Field Charge Modulator with Bipolar-gates for High Time-Resolved Imaging

Yuki Morikawa; Keita Yasutomi; Shoma Imanishi; Taishi Takasawa; Keiichiro Kagawa; Nobukazu Teranishi; Shoji Kawahito

doi:10.11485/itetr.40.40.0_15

40.40 Information Sensing Technologies(IST)

Session ID : IST2016-55

DOI https://doi.org/10.11485/itetr.40.40.0_15

Conference information

Host: Information Sensing Technologies(IST)

Name : Information Sensing Technologies(IST)

Date : November 17, 2016

A Lateral Electric Field Charge Modulator with Bipolar-gates for High Time-Resolved Imaging

*Yuki Morikawa, Keita Yasutomi, Shoma Imanishi, Taishi Takasawa, Keiichiro Kagawa, Nobukazu Teranishi, Shoji Kawahito

Author information

Keywords: CIS, Time-resolved IS, TOF, Lateral-Electric-Field charge Modulator, negative gate biasless

CONFERENCE PROCEEDINGS FREE ACCESS

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Abstract

This paper reports high time-resolved imaging technique using a lateral electric field charge modulator with bipolar-gates. The proposed pixel structure achieved high time-resolved signal detection by using negative bias effect by work function difference between the p-type gate and p-substrate. The test chip fabricated in 0.11 um CIS technology demonstrates the hole attraction effect, and the modulation contrast is measured to be 97%.

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