Low Temporal Noise and High Dynamic Range Global Shutter CMOS Image Sensor with Multiple Accumulation Shutter

Abstract

A low noise and high dynamic range global shutter CMOS image sensor with multiple accumulation shutter is described. The pixel having a 6.4μm pitch, achieved 1.8e- temporal noise and full well capacity of 70,000ewith charge domain memory, corresponding to 92dB dynamic range. Moreover, another pixel having a 3.4μm pitch, achieved 1.8e- temporal noise and full well capacity of 16,000e- while maintaining fundamental pixel performance. In the signal readout procedure, light exposure and signal readout are executed simultaneously, hence the seamless signal accumulation can be carried out.