A High Optical Performance 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Light Guide Structure

Hiroshi SEKINE; Masahiro KOBAYASHI; Yusuke ONUKI; Kazunari KAWABATA; Toshiki TSUBOI; Yasushi MATSUNO; Hidekazu TAKAHASHI; Shunsuke INOUE; Takeshi ICHIKAWA

doi:10.11485/itetr.41.32.0_5

41.32 Information Sensing Technologies(IST)

Session ID : IST2017-50

DOI https://doi.org/10.11485/itetr.41.32.0_5

Conference information

Host: Information Sensing Technologies(IST)

Name : Information Sensing Technologies(IST)

Date : September 25, 2017

A High Optical Performance 3.4 μm Pixel Pitch Global Shutter CMOS Image Sensor with Light Guide Structure

*Hiroshi SEKINE, Masahiro KOBAYASHI, Yusuke ONUKI, Kazunari KAWABATA, Toshiki TSUBOI, Yasushi MATSUNO, Hidekazu TAKAHASHI, Shunsuke INOUE, Takeshi ICHIKAWA

Author information

Keywords: Global shutter, CMOS image sensor, Light Guide, Multiple Accumulation Shutter

CONFERENCE PROCEEDINGS FREE ACCESS

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Abstract

We describe a high optical performance 3.4 μm pixel pitch global shutter CMOS image sensor with a light guide structure. The sensitivity and the parasitic light sensitivity are 28,000 e-/lx·s and -89 dB, respectively. Moreover, the incident light angle dependence of sensitivity and parasitic light sensitivity has been improved by the light guide structure. The pixel achieves 1.8 e- temporal noise and full well capacity of 16,200 e- with charge domain memory in 120 fps operation by multiple accumulation shutter technology.

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