Measurement of Thermophysical Properties of Molten Semiconductors using Levitation Technique

Abstract

In order to improve silicon crystal quality, better understanding of heat and masstransfer process during crystal growth through numerical modelling is indispensable. More accurate thermophysical property data are required for numerical modelling. Combining levitation and microgravity, which can supply a contamination-free and under-cooled condition, is receommended as a novel tool to supply a lot of missing thermophysical property data for undercooled melts.