Journal of The Japan Society of Microgravity Application
Print ISSN : 0915-3616
Measurement of High Accurate Diffusion coefficient in Melt of Semiconductor and Metal by using Shear Cell Method
Shin-ichi YODA Hirohisa ODAToshihiko OIDATadahiko MASAKIMinoru KANEKOKazuyuki HIGASHINO
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JOURNAL OPEN ACCESS

1999 Volume 16 Issue 2 Pages 111-

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Abstract
Shear cell technology for high precise diffusion coefficient measurements was developed by using microgravity condition in MSL- 1. Two diffusion experiments with Sn and PbSnTe specimens were done in the mission. Excellent concentration profile was obtained in self-diffusion experiments of Sn by the shear cell technology developed for these experiments, whereas the PbSnTe experiment results were scattered. The reason for the scattering was ascribed to the facts that steeper tempera­ture gradient was formed in the cartridge under microgravity compared to that on ground. This steeper thermal gradient would enhance the transpiration of the vapor from the center to outer of the cartridge. Temperature dependence of diffusion in Sn was obtained with the data by Frohberg. The dependence was a little different from that obtained by Frohberg.
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© 1999 The Japan Society of Microgravity Application
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