Abstract
We have developed a new crystal growth method named the traveling liquidus-zone (TLZ) method and found that the TLZ method is promising for growing compositionally uniform alloy crystals such as In0.3Ga0.7As and Si0.5Ge0.5. Our one-dimensional TLZ growth model predicts precisely the sample translation rate for growing homogeneous alloy crystals when the mass transport during the crystal growth is diffusion-limited. If convection occurs in a melt, control of the mass transport gets difficult and compositional uniformity is deteriorated. Then, we investigated the effect of convection during the crystal growth of InxGa1-xAs (x: 0.1～0.3) experimentally. We also tried to suppress convection in a melt by reducing the melt thickness in platy crystals terrestrially. Here, we report on experimental results performed for inves-tigating effect of convection in the TLZ growth method.
