Abstract
The formation and the suppression of type II striation in compound semiconductors grown by travelling heater method (THM) are studied. The work was done by an international cooperation between Germany and Japan supported by Science and Technology Agency of Japan. GaSb and InP crystals grown by SL-1 and D-1 missions and on ground by German group are studied with differential interference microscope and specially resolved photoluminescence spectrometer. By comparing theory and experiment, it is concluded that the suppression of type II striation is possible by applying a temperature gradient and keeping the growth velocity lower than a certain value.
