Effects of Process Parameters on Deposition Rate of SiC Nanowires by Chemical Vapor Deposition

Abstract

Chemical Vapor Deposition (CVD) is a suitable way to prepare silicon carbide (SiC) nanowires. The deposition temperature, gas velocity, and distribution of mixed gas components in the CVD tube are the primary factors affecting the final deposition rate. The influence of process parameters, consisting of deposition temperature, the flux of MTS, the flux of mixed gases and the ratio of Ar and H₂, on deposition rate of SiC nanowires were calculated numerically. The process parameters achieved optimization by an orthogonal L₉(3)⁴ test to get high deposition rate SiC nanowires. The optimal deposition rate for SiC nanowires is obtained under the following operating conditions: deposition temperature of 1473 K, flux of MTS of 5 mL/min, flux of mixed gases of 525 mL/min, and Ar : H₂=1 : 1. Two calculation results were verified by the corresponding experimental results, which revealed the accurateness of the simulation results remarkably.